Vladimir Smirnov » Публикация
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Опубликовано
2002-06-03
Опубликовано на SciPeople2011-06-03 16:22:31
ЖурналMRS Symp. Proc.
Transient Photocurrents in Microcrystalline Silicon Films
MRS Symp. Proc. 715, p. 345 (2002)
Аннотация
Transient photoconductivity in microcrystalline silicon thin films prepared by VHF
PECVD over a range of [silane] : [silane + hydrogen] concentrations r from 3 to 6.3%
has been measured as a function of temperature (210 K - 390 K) and laser pulse density
(1013 – 1016 cm3). The behavior of highly crystalline films (r ≈ 3%) bears certain
similarities to n-type amorphous silicon, where the power law decay at long times is
controlled by hole rather than electron kinetics. As r approaches 6% the decay begins to
resemble that of intrinsic amorphous silicon, consistent with structural studies which
indicate a transition from crystalline to amorphous character. Transient photocurrent
density of states spectroscopy on transitional films suggests a similar deep defect density
to high-quality amorphous silicon, but a larger conduction band tail energy of some 30
meV and a tenfold increase in localised state density at a depth of about 0.4 eV.
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