Антон Глотов » Публикация

Аннотация AlxGa1-xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped AlxGa1-xAs alloys, led not only to the reconstruction of the electron density and formation of deep levels (DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary AlxGa1-x-ySiy+zAs1-z substitution-type alloy grown on GaAs(1 0 0).