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Опубликовано 2011-04-04 Опубликовано на SciPeople2012-04-04 11:33:10 ЖурналCondensed matter and interphases

Raman and photoluminescence spectroscopy of lowtemperature heterostructures AlGaAs/GaAs(100)

E. P. Domashevskaya, P. V. Seredin, A. V. Glotov [et al.] / Антон Глотов

Condensed matter and interphases. – 2011. – Т.11.- №2. – Pp. 95–100.

Аннотация Methods of Raman backscattering and photoluminescence spectroscopy allowed to study substructure and luminescence of epitaxial low temperature MOCVD AlGaAs/GaAs (100) heterostructures. It is shown, that experimental data received during work correlate with results of the structural and optical researches accomplished in the previous work. The assumption that at high concentration of a carbon acceptor atoms concentrate on defects of a crystal lattice of AlGaAs solid solution with formation of carbon nanoclusters is confirmed.