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Аннотация We describe the preparation of layers of amorphous Se, AsxS1-x, AsxSe1-x, GexS1-x and GexSe1-x by plasma-enhanced chemical vapour deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy.