Профиль » Публикация
Опубликовано
2004-00-00
ОрганизацияCarnegie Laboratory ofPhysics, Electronic Engineering and Physics Division, University of Dundee, Dundee, DD1 4HN, Scotland, UK
ЖурналЖурнал "Физика и Техника Полупроводников"
Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films
Persheyev S.K., Drapacz P.R., Rose M.J., Fitzgerald A.G. Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films // ФТП, 2004, том 38, выпуск 3, Стр. 358
Аннотация
The diffusion of chromium bottom contact has been studied through thin10 nm amorphous silicon film. The concentration of the diffused impurity has been analysed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at400oC and annealing time varied from 0-300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film limited by silicide formation at the metal-silicon interface.
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