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Опубликовано 2005-00-00 ОрганизацияInstitute of Radio Engineering and Electronics (Saratov Division), Russian Academy of Sciences, 410019 Saratov, Russia * Department of Electrical, Computer, and System Engineering and RPI/IBM Center for Broadband Data Transfer, CII9015, Rensselaer Polytec ЖурналЖурнал "Физика и Техника Полупроводников"

Resonant terahertz response of aslot diode with atwo-dimensional electron channel

Popov V.V., Tsymbalov G.M., Shur M.S., Knap W.

Popov V.V., Tsymbalov G.M., Shur M.S., Knap W. Resonant terahertz response of aslot diode with atwo-dimensional electron channel // ФТП, 2005, том 39, выпуск 1, Стр. 157

Аннотация Terahertz response of a slot diode with two-dimensional electron channel is calculated on the basis of the first principles of electromagnetism. It is shown that all characteristic electromagnetic lengths (scattering, absorption and extinction lengths) as well as the impedance of the diode exhibit resonances at the frequencies of plasmon excitation in the channel. The fundamental resonance behaves similar to the current resonance in a RLC circuit. Aconclusion is drawn that a slot diode with two-dimensional electron channel provides a resonant circuit at terahertz frequencies that couples effectively to external electromagnetic radiation with loaded Q-factor exceeding unity even at room temperature. The diode resistance may be measured from contactless measurements of the characteristic electromagnetic lengths of the diode.