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Опубликовано 2006-00-00 Опубликовано на SciPeople2009-09-04 12:01:06 ЖурналMater. Res. Soc. Symp. Proc.

Intrinsic defects in high purity semi-insulating 6H SiC
D. V. Savchenko, E. N. Kalabukhova, S.N. Lukin, T.S. Sudarshan, Y.I. Khlebnikov, W.C. Mitchel, S. Greulich-Weber / Дария Савченко
Аннотация Electron paramagnetic resonance (EPR) and photo EPR measurements were performed on undoped semi-insulating (SI) 6H SiC material grown by the physical vapor transport (PVT) method. EPR lines from a carbon-related surface defect, two photosensitive high temperature stable intrinsic defects with S=1/2 and shallow nitrogen and boron were observed. The EPR spectrum of the intrinsic defect labeled XX was observed in the dark and consists of three single lines XX1, XX2, XX3 due to three inequivalent sites in the 6H SiC. The second defect labeled PP appeared in EPR spectrum during photo-excitation of the SI 6H SiC and consisted of a single EPR line. The photo EPR data placed the energy level of the defects in the region EV + 1.24 ÷1.29 eV. The EPR parameters and symmetry behavior of XX agree well with those of the carbon vacancy-related Ky center observed in p-type electron irradiated 6H SiC and we tentatively identify the XX defect with VC +. The electronic processes occurring in undoped SI 6H SiC under photo-excitation are also described.
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