Electron paramagnetic resonance (EPR) investigations were carried out on hybrid Core-Shell nanomaterials associating silicon carbide nanoparticles and conducting polyaniline. The performed experiments compare the paramagnetic centres, the electronic transport features and the interface effects...

Nonstoichiometric b-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy...

Three paramagnetic defects were revealed in amorphous hydrogenated carbon-rich silicon-carbon alloy films a-Si0.3C0.7:H. Two of them were attributed to silicon
Si dangling bonds
Si DBs and carbon-related defects CRDs. The third defect, based on its g-value and linewidth, was tentatively...

The X-, Q-band field-sweep electron spin echo (FS ESE) study of n-type 6H SiC wafers shows besides the well known hyperfine (hf) triplet lines of 14N on two quasi-cubic (Nc1, Nc2) and hex-agonal (Nh) sites additional triplet lines (Nx) of comparatively low intensity with a g-tensor of about the...

EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines (Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently re-interpreted as spin-forbidden lines,...

The homogeneity of the distribution of impurities and defects in a 6H-SiC wafer cut out from a nominally undoped 6H-SiC ingot grown by the physical vapor transport (PVT) method at the Bandgap Technologies Inc. (USA) has been studied making use of the electron paramagnetic resonance (EPR) and...

The kinetics of the behavior of photosensitive impurities and defects in the high-purity semi-insulating material 4H-SiC has been studied both theoretically and experimentally using electron paramagnetic resonance (EPR) under photoexcitation and optical admittance spectroscopy. The rate equations...

D-band EPR, X-band FS ESE and pulsed ENDOR studies of the additional nitrogen (N) related centers observed in highly compensated n-type 6H-SiC wafers are presented. The D-band EPR and X-band FS ESE spectrum consists of the 14N hyperfine (hf) triplet lines of the N donors incorporated at the two...

Stoichiometric and nitrogen doped SiC nanopowders have been investigated by multi-approaches EPR methods. The paramagnetic intrinsic defects formed in the nanoparticles were studied by cw EPR, field swept electron spin echo, pulsed electron nuclear double resonance and hyperfine sublevel...

Electron paramagnetic resonance (EPR) and photo EPR measurements were performed on undoped semi-insulating (SI) 6H SiC material grown by the physical vapor transport (PVT) method. EPR lines from a carbon-related surface defect, two photosensitive high temperature stable intrinsic defects with...