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Аннотация In the present study, two new methods are proposed for polishing of silicon wafers using the ultra-dispersed diamonds (UDD). The first proposed polishing method uses a polishing tool with an ultra-fine abrasive material made by electrophoretic deposition of UDD onto a brass rod. Dry polishing tests showed that the surface roughness of the silicon wafer has been reduced from Ra=107 to 4 nm after polishing for 30 min. The second method uses a new polishing pad with self-generating porosity. By polishing using the new pad in combination with the polycrystalline UDD in water suspension, it is possible to achieve the specified surface roughness of the silicon wafer rather faster than using a conventional pad made of foamed polyurethane. The tests showed that the surface roughness of the silicon wafer has been reduced from Ra=107 to 2 nm after polishing for 90 min.