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Аннотация The dark and photoconductivity along with pulsed electron spin resonance have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (mu c-Si : H) sample. The transport mechanism in mu c-Si : H is discussed based on these measurements. Striking similarities in the temperature dependences of the dark and photoconductivity between mu c-Si : H and some well studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of mu c-Si : H.