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Опубликовано 2005-00-00 Организация* Hungarian Academy of Sciences, Research Institute for Technical Physics andMaterials Science, P.O. Box49, H-1525 Budapest, Hungary + College of Engineering Budapest, Institute of Microelectronics and Technology, H-1084 Budapest, Hungary ЖурналЖурнал "Физика и Техника Полупроводников"

Some Aspects to the RHEED Behaviour ofLT-GaAs Growth

Nemcsics Akos

Nemcsics Akos Some Aspects to the RHEED Behaviour ofLT-GaAs Growth // ФТП, 2005, том 39, выпуск 11, Стр. 1399

Аннотация The RHEED behaviour during MBE growth on GaAs (001) surface under low temperature (LT) growth conditions is examined in this work. The RHEED and its intensity oscillations of LT-GaAs growth have some particular behaviour. The intensity, phase and decay of oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature etc. We examine here the intensity dependence of RHEED behaviour on BEP ratio, substrate temperature and the excess of As content in the layer. The change of the decay constant of the RHEED oscillations is also discussed.